feb. 2009 CM600DU-24F 4- 6.5 mounting g2e2 e1g1 e2 c1 c2e1 rtc rtc tc measured point tc measured point circuit diagram holes 140 130 110 0.25 10 110 0.25 130 14.5 40 14.5 20.4 10 35 +1 -0.5 24.5 +1 -0.5 36 43.8 13.8 11.5 8 20 9 (26) (26) (26) (15) (15) 65 3-m8 nuts 4-m4 nuts g2 e2 e1 g1 c2e1 e2 c1 application general purpose inverters & servo controlers, etc mitsubishi igbt modules CM600DU-24F high power switching use i c ................................................................... 600a v ces .......................................................... 1200v insulated type 2-elements in a pack outline drawing & circuit diagram dimensions in mm
feb. 2009 2 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v v cc = 600v, i c = 600a, v ge = 15v v cc = 600v, i c = 600a v ge = 15v r g = 1.0 ? , inductive load i e = 600a i e = 600a, v ge = 0v igbt part (1/2 module) fwdi part (1/2 module) case to heat sink, thermal compound applied *2 (1/2 module) case temperature measured point is just under the chips i c = 60ma, v ce = 10v i c = 600a, v ge = 15v v ce = 10v v ge = 0v collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance t otal gate charge t urn-on delay time t urn-on rise time t urn-off delay time t urn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance *3 external gate resistance i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c? q r g 1200 20 600 1200 600 1200 1540 ?0 ~ +150 ?0 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 mitsubishi igbt modules CM600DU-24F high power switching use v v a a a a w c c v rms n ?m g 2 80 2.55 230 10 6 450 200 800 300 500 3.35 0.081 0.11 0.032 5.2 ma a nf nf nf nc ns ns ns ns ns c v k/w k/w k/w k/w ? 1.95 2.05 6600 43.2 0.010 1.0 6v v 57 gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 symbol parameter v ge(th) v ce(sat) note 1. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. * 1 : case temperature (tc) measured point is indicated in outline drawing. * 2 : typical value is measured by using thermally conductive grease of = 0.9[w/(m ?k)]. * 3 : if you use this value, r th(f-a) should be measured just under the chips. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage t orque strength weight g-e short c-e short t c = 25 c pulse (note 2) t c = 25 c pulse (note 2) t c = 25 c terminals to base plate, f = 60hz, ac 1 minute main terminals m8 screw mounting m6 screw g(e) terminal m4 screw t ypical value symbol parameter collector current emitter current conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit t yp. limits min. max. maximum ratings (tj = 25 c, unless otherwise specified) electrical characteristics (tj = 25 c, unless otherwise specified) t est conditions t j = 25 c t j = 125 c
feb. 2009 3 mitsubishi igbt modules CM600DU-24F high power switching use 600 800 1000 1200 400 200 0 00.511 .5 2 2.5 3 3.5 4 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 00.511 .5 2 3.5 4 2.5 3 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 ? 2 10 0 357 2 10 1 357 2 10 2 357 0.5 1 1.5 2 2.5 3 0 0 200 400 600 800 1000 1200 5 4 4.5 3 3.5 2 2.5 1 1.5 0.5 0 6810 12 14 16 18 2220 10 1 10 2 23 57 10 3 23 57 10 1 2 3 5 7 10 2 2 10 3 2 3 5 7 3 5 7 10 0 8.5 9.5 t j = 25c t j = 125c v ge = 15v t j = 25c t d(off) t d(on) t f output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) half-bridge switching characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) switching times (ns) collector current i c (a) t r 10 9 8 v ge =20v t j =25c 11 15 i c = 1200a i c = 600a i c = 240a v ge = 0v c ies c oes c res conditions: v cc = 600v v ge = 15v r g = 1.0? t j = 125c inductive load t j = 25c performance curves
feb. 2009 4 mitsubishi igbt modules CM600DU-24F high power switching use 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 ? 10 0 7 55 3 2 10 ? 7 3 2 10 0 7 5 3 2 3 2 10 ? 7 5 3 2 10 ? 2357 2357 2357 2357 10 ? 10 ? 10 ? 10 ? 0 2 4 6 8 10 12 14 16 18 20 0 2000 4000 6000 8000 10000 1 i rr t rr 10 ? 10 0 10 1 23 57 23 57 v cc = 400v v cc = 600v i c = 600a reverse recovery characteristics of free-wheel diode (typical) emitter current (a) transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j?) time (s) gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) reverse recovery time t rr (ns) reverse recovery current l rr (a) single pulse t c = 25c igbt part: per unit base = r th(j c) = 0.081k / w fwdi part: per unit base = r th(j c) = 0.11k / w conditions: v cc = 600v v ge = 15v r g = 1.0? t j = 25c inductive load
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